Study the Power He-Ne Laser Effect on Dermatophyte Candida albicans

Authors

  • Sameerah Hasan Abdullah Community Health Technologies Department, Kirkuk, Northern Technical University

DOI:

https://doi.org/10.31149/ijimm.v4i2.2651

Keywords:

C. albicans, He–Ne laser, Low-Level Laser Therapy, Dry Weight

Abstract

Candida albicans is an opportunistic yeast, which is part of the human flora and can cause superficial and systemic infections. He–Ne laser (632.8 nm) in low-level laser therapy was found to modulate the bacteria growth without inducing thermal damage. The effects of He–Ne laser irradiation on the growth and biomass of C. albicans from skin infections were examined in this work. Seventy-five skin swabs of 15–40 years old patients were cultured on Sabouraud Dextrose Agar. One strain of C. albicans was irradiated by a He–Ne CW laser at 632.8 nm with exposure times of 10, 30 and 50 s. Colony size, dry weight, daily growth rate, recovery efficiency and morphological modifications were determined. Each treatment was replicated three times. Short-term irradiation (10 seconds) significantly inhibited yeast growth, reducing colony diameter to 2.10 ± 0.10 cm, dry weight to 60 ± 2 mg, daily growth rate to 0.53 cm/day, and recovery ratio to 65.6%, compared with the control (3.20 ± 0.12 cm, 85 ± 3 mg, 0.80 cm/day, 100%). Longer irradiation times (30–50 seconds) resulted in partial recovery of growth and biomass, indicating a biphasic response. Morphological examination showed reduced hyphal formation at 10 seconds, whereas colonies at 30–50 seconds resembled the control. The inhibitory effect of He–Ne laser on C. albicans is time dependent, and the most significant suppression occurred after minimum exposure to laser. These findings indicate that low power He-Ne laser could be used as a supplementary antifungal form.

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Published

2026-02-15

How to Cite

Abdullah, S. H. (2026). Study the Power He-Ne Laser Effect on Dermatophyte Candida albicans. International Journal of Integrative and Modern Medicine, 4(2), 21–28. https://doi.org/10.31149/ijimm.v4i2.2651

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